Imec Presents Breakthrough Results In Resistive-Switching (R)RAM
Posted June 15, 2012 8:16 AM
From Phys.org - latest science and technology news stories:
At this week's VLSI Technology Symposium (Honolulu, Hawaii), Imec presents significant improvements in performance and reliability of RRAM cells by process improvements and clever stack-engineering, and imec introduces a new modeling approach increasing the fundamental understanding of RRAM process technology. These achievements pave the way towards scalability and manufacturability of RRAM technology.