MIT Researchers Concoct Smallest Indium Gallium Arsenide Transistor Ever Made
Posted December 12, 2012 9:48 AM
Researchers at MIT's Microsystems Technology Laboratories may be giving Moore's Law a new lease on life with the development of the smallest indium gallium arsenide transistor ever made, measuring up at 22-nanometers. Such transistors could produce more current when shrunken down than those based on silicon, which means chips may continue to pack in more transistors while providing a bigger punch. "We have shown that you can make extremely small indium gallium arsenide MOSFETs (metal-oxide semiconductor field-effect transistors) with excellent logic characteristics, which promises to take Moore's Law beyond the reach of silicon," says co-developer of the tech Jesús del Alamo. The development is an encouraging step in the right direction, but the MIT team still has a long road ahead of it before the tech shows up in your gadgets. Next on the docket for the scientists is improving the transistor's electrical performance and downsizing it to below 10-nanometers. For the nitty gritty on how the transistor was built, hit the adjacent source link.
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