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As detailed in a recent IEEE Journal of Electron Device Letters article, researchers at the University of Illinois have figured out how to fabricate a metal-semiconductor field-effect transistor (FET) using a self-assembled, planar gallium arsenide (GaAs) nanowire channel. Does this mean that nanowire and nanotube FETs could be manufactured at the current scale of silicon MOSFETs? Could they replace conventional devices?
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