Silicon Carbide Grade - SiC -1H

Haven't found much of anything about this except for this from IEEE:

the new vertical 1H-Sic. It should be mentioned here that the. data. for the first. epitaxial layer were gained from intensive simulation work ...
ieeexplore.ieee.org/iel5/6912/18590/00856809.pdf

Abstract
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs and JFETs capable to block 1800 V with a specific on-resistance of 47 mΩ cm² and 14.5 mΩ cm², resp., are discussed. However, there are additional advantages making SiC devices attractive for the system designer. The authors present fast recovery of the 6H-SiC MOSFET reverse diode (Q_rr 30 nC, t_rr 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs. Finally, a short outlook to future SiC switching devices is given

More can be found out if you are registered to IEEE

Hope this helps