TUNNEL,GUNN and IMPATT Diodes

In my experience with low power, low cost, <15GHz microwave circuits, the GUNN diode is/was a more commonly available part. We used many in low power microwave circuits for decades until we replaced them with DRO and microstrip circuits. Suggest you seek additional information from engineers and manufacturers with higher power RF/Microwave experience.

http://en.wikipedia.org/wiki/Gunn_diode
http://en.wikipedia.org/wiki/Tunnel_diode
http://en.wikipedia.org/wiki/IMPATT_diode

I am very much greatful for your assistance sir.

among these three which one is most useful for continuous power generation?

and which one is best to avoid noise ?

(like as much I know in IMPATT diode,there is a problem for noise,due to abrupt generation of carrier.)

if you please add the reasons of these power generation and noise structure,then it will be a bit more helpful,sir.

Sorry, but I cannot assist further without a legal employment contract, monetary compensation, and signed non-disclosure/I.P. agreements form all involved parties. Best wishes on your studies.

thanks a lot sir, for your time.

I found this usefull tips:

Tunnel diode - semiconductor diode characterized by a small thickness of the pn junction, a very high concentration of dopants on both sides and a negative dynamic resistance for a certain range of polarizing voltages. It was invented in 1957 by the Japanese physicist Leo Esaki (hence sometimes it can be named Esaki diode). During research on semiconductor junctions he noticed their thus far unprecedented feature based on the tunnel phenomenon. This phenomenon causes charge carriers move through the narrow barrier layer at a very low voltage.

from here: tunnel diode