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Member

Join Date: Oct 2010
Posts: 6

High Power RF Switch

10/28/2010 8:21 AM

Hello,

I am designing a PIN diode SPDT switch, the operating frequency range is 8-12 GHz. Power requirement: upto 10 W CW. Insertion loss: 2.5 dB, Isolation: 50 dB and VSWR: 2:1

I am using a shunt design with quarter- wavelength spacing between the diodes. And I am adding another shunt on both the sides to give better isolation.

This is the first time I am designing a high power switch, I am having a tough time finding an RF inductor with that power limit to be used in the bias network. I know that the Irms and DC Resistance ratings determine the power (Pavg = (Irms)^2 * DCR). I am looking at air core RF inductors as it's also a high frequency application.

I hope I am on the right track. Any ideas on where I can find a RF inductor satisfying the above requirements? Also, what values of Irms and DCR should I be looking at?

I guess it's better if the DCR is low for better performance?!

I really appreciate any help.

Thanks.

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Anonymous Poster
#1

Re: High power RF switch

10/28/2010 8:33 AM

have you thought about using a microstrip or strip line inductor. thats what i would do.

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Posts: 6
#2
In reply to #1

Re: High power RF switch

10/28/2010 9:10 AM

Yes, that should work. Just that we usually prefer working with replaceable parts. But thanks for that suggestion.

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Power-User
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Location: Torquay England
Posts: 202
Good Answers: 4
#3

Re: High Power RF Switch

10/29/2010 6:47 AM

what sort of speed do you want to switch at?

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Posts: 6
#4
In reply to #3

Re: High Power RF Switch

10/30/2010 7:47 PM

A maximum of 500 ns

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