Schottky Diode

Short answer is yes.

so it will have low drop voltage and and will good efficiency. thanks

and sorry, another question, can i parallel the diode to get biggest ampere ...?

what is the bad impact ....? and the worst result.....?

the reasons was difficult to find biggest ampere for schottcky diode in my place....

regards

Why do you want to run parallel diodes rated at 200A when your stated load is only 50A?

Have you consulted the diode's data sheet and diode manufacturers literature (available of their website) for application-specific information?

Dear Jack of all trades and all....

thanks for the answer, some time i get difficult find 200Ampere diode, so in my mind i will use 4 pieces 50Ampere diode to handle 50Ampere load.

because in my last system design, i always use diode rating 4times bigger than what i need. life time and reliability reasons.

about parallel 4 diode, is that okay for each diode self, i am worry about load sharing each diode.

and to make it sure again, is this okay i use high frequency schottky diode to rectified 50Hz frequency.....?

regards

i always use diode rating 4times bigger than what i need. life time and reliability reasons.

This level of redundancy is generally not really necessary, diodes are (really) reliable as long as they are operated within their parameters and the heatsinking is sized correctly (and paralleling does little to offer redundancy due to voltage spikes or over voltage events across parallel devices at the same voltage).

Additionally larger diodes should be readily available from local distributors, you shouldn't need to provide parallel diode redundancy instead of specifing a diode with a larger current rating. If given a choice between parallel diodes or a single higher rated diode, I would go with a single diode.

What is the part number of the diode you are looking at?

Do keep one thing in mind, Metal-to-semiconductor contacts are of great importance since they are present in every semiconductor device. They can behave either as a Schottky barrier or as an ohmic contact dependent on the characteristics of the interface. This chapter contains an analysis of the electrostatics of the M-S junction (i.e. the charge, field and potential distribution within the device) followed by a derivation of the current voltage characterisitics due to diffusion, thermionic emission and tunneling and a discussion of the non-ideal effects in Metal-Semiconductor junctions.