...."The external quantum efficiency of a device is 100% when one incoming photon generates one electron to the external circuit. 130% efficiency means that one incoming photon generates approximately 1.3 electrons.
The researchers found out that the origin of the exceptionally high external quantum efficiency lies in the charge-carrier multiplication process inside silicon nanostructures that is triggered by high-energy photons. The phenomenon has not been observed earlier in actual devices since the presence of electrical and optical losses has reduced the number of collected electrons.
"We can collect all multiplicated charge carriers without a need for separate external biasing as our nanostructured device is free of recombination and reflection losses," Prof. Savin explains.
In practice, the record efficiency means that the performance of any device that is utilizing light detection can be drastically improved. Light detection is already used widely in our everyday life, for example, in cars, mobile phones, smartwatches and medical devices."...
https://phys.org/news/2020-08-black-silicon-photodetector-efficiency-limit.html
What can we use this for...?
Black Silicon Photodetector Breaks the 100% Efficiency Limit
Re: Black Silicon Photodetector Breaks the 100% Efficiency Limit
