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Discussion on Problems in the Process of Magnetron Sputtering or Ion Beam Sputtering

09/17/2025 9:36 PM

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Hello everyone,

During magnetron sputtering or ion beam sputtering, a common practical problem is the uneven sputtering rate distribution of the target, resulting in inconsistent film thickness or composition. This poses challenges in optical coatings, semiconductor devices, and even functional ceramic coatings.

I'm aware of several solutions:

Improving material removal uniformity by optimizing the target structure (e.g., target geometry or backing plate design).

Adjusting the substrate's trajectory, such as using planetary rotation or oscillating motion, to balance the deposition rate.

Adjusting the magnetic field design or power distribution to adjust the plasma density.

Selecting the appropriate target density and purity can reduce localized ablation and particle ejection.

I would like to ask: Which methods have been most effective in your applications? Are there any special design or process experiences that can significantly improve film uniformity?

Is unevenness more likely to occur when using high-melting-point or ceramic targets?

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Focus on inorganic materials, sputtering targets, and thin film technologies. Interested in high-purity metals, ceramics, and functional compounds for semiconductor, optics, and renewable energy applications.
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#1

Re: Discussion on problems in the process of magnetron sputtering or ion beam sputtering

09/18/2025 12:15 AM

What is the variation in the thickness of the coating you are experiencing? What is your target maximum variation in thickness?

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Location: Bergener Straße 14., 30625 Hannover, Germany.
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#2
In reply to #1

Re: Discussion on problems in the process of magnetron sputtering or ion beam sputtering

09/22/2025 3:15 AM

Our target maximum variation is ±5%

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Focus on inorganic materials, sputtering targets, and thin film technologies. Interested in high-purity metals, ceramics, and functional compounds for semiconductor, optics, and renewable energy applications.
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