MEMS

Homework?????? Certainly sounds like homework!

This really does look like a homework question you know.

http://cr4.globalspec.com/faq

Have you tried looking in your (or a) text book for the formulas applicable to silicon oxide formation using the variables of temperature, humidity, time (and possibly pressure)? There will be one (or more which govern oxide formation), no I don't know what they are sorry but these links may send you in the right direction.

http://en.wikipedia.org/wiki/Silicon

http://en.wikipedia.org/wiki/Silicon_dioxide

Here are some outline notes of a lecture about it. There are also some references to textbooks. You may need a trip to the library!

You really should have taken notes during lectures.

Notes: Assuming that this is a coursework question, you should be expected to show how you calculated this based on whichever of surface reaction rate, solubility, and diffusion rate are dominant. You also need to make some assumptions (partial pressure of O2 and steam for each case - this is usually taken as atmospheric for student questions, but is often very different in a practical fab). I expect that you were given the figures you need, but if not you can easily find them in Sze's "Physics of semiconductor devices" or even on the web.