Q : An n-well Implant in a CMOS Process....

Hi all,

I am doing my M.Tech in CET BBSR, odisa(India) want to the solution of following question, if anybody knows the site address,pls send it to me in the e-mail address.

Q : An n‐well implant in a CMOS process is formed with a 2 X 10¹⁵cm‐2 phosphorus implant at 40 keV (assume very shallow for Gaussian calculations). Calculate the inert‐ambient drive‐in time required at 900 degree Centigrade for the doping level at a depth of 0.2μm to reach a concentration of 10¹⁷cm-3 based on:

(a) Simple Gaussian expressions and fixed D (intrinsic value).

(b) Simple Gaussian expressions and fixed D (extrinsic value equal to peak doping at end of process).

Comment on similarities and differences between results.

thanks in adv.

Manas Sinha