Flexible Silicon Transistors Set New Speed Record

Using low-temperature processes to pattern circuitry on single-crystalline silicon placed on a flexible polyethylene terephthalate (PET) substrate, a team of scientists from the University of Wisconsin-Madison have developed a flexible transistor that operates at 38 GHz. According to the researchers, simulations indicate that the transistor design has the potential to operate at the lightning speed of 110 GHz. To achieve the result, the scientists covered the single-crystalline silicon with a dopant rather than selectively doping it.

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