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From What's Next In Science & Technology:
Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant atoms in silicon.
The researchers are able to measure and manipulate a single dopant atom in a realistic semi-conducting environment. The individual behaviour of dopant atoms is a stumbling block to the further miniaturisation of electronics.
The researchers have published their findings in the Physical Review Letters.
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Re: Scientists Successfully Measure Transport Through a Single Atom in a Transistor
