Good Question. It's a shame there isn't a button to vote accordingly. :-)
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Some forms of diodes such as Fast recovery (FRP), Schottky barrier(SBD) and High efficiency (HED) are known as switching diodes to differentiate them from normal rectifying diodes.
They have a lower forward voltage and faster reverse recovery time which allows them to operate at much higher frequencies (up to 100kHz) than rectifier types (less than 500Hz), but generally handle lower voltage and current levels than rectifier diodes.
As to the question - switching speed is a function of the design of the device, how fast it can transition from conducting to non conducting will be a function of junction capacitance, and I doubt that can be influenced by the user.
If you're using another discrete device to switch the diode, then increasing its speed could allow the diode to commutate faster, but that's really only taking advantage of the inherent capability of the diode rather than improving it.
If you're talking about improving the speed in a manufacturing sense, then I suggest that the major manufacturers will be way ahead of you in any developments in this field.
".If we reduce the reverse recovery time process, we can improve the switching(ON to OFF) process time.Practically for reducing reverse recovery time by introducingGOLD, it increase the recombination rate in the diode."
I'm reporting this as SPAM!
Poorly written↓ SPAM, but SPAM none the less!
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e.g. the less the current the less the junction capacitance (less NRG to move the carriers , less range for carriers to move , less NRG to move the carriers ? . . .) you´ve 2 consolidate to parasitic capacitances e.c. to put your signal through - goes to a bit of a quantum theory - the higher the speed the lower the NRG the less possible to determine the system state ???
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