Details of problem faced in plasma nitriding as below ---
1 ) Plasma takes place only below a pressure of one torr . As per practice the plasma nitriding is suppose to be done at around five torr.
2) Case depth achieved is about 20-30 micron only in 12 hrs nitriding cycle.
3) How to measure temperature in plasma system accurately. We use R.T.D. sensors.
4) We are using power supply of the following specifications.
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SPECIFICATIONS FOR 60 KW POWER SUPPLY SYSTEM |
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INPUT |
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Nominal Voltage 415 V AC, (+ 10 % to – 10%) Three Phase & N |
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Nominal Frequency 50 Hz. (+/- 10%) |
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RECTIFIER |
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Type Full Wave |
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OUTPUT |
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Power Capacity 60 KW |
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Nominal Voltage 0 to 1200 V, Adjustable through 10 turn pot. With dial |
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Frequency 1kHz to 6 kHz Variable |
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Duty cycle 10% to 95% |
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Waveform Duty cycle controlled chopped DC output with variable frequency. |
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EFFICIENCY At full load |
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Overall Efficiency (AC to AC) > 90% at 100% Load |
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ENVIRONMENTAL |
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Acoustic Noise Level <64 db @1.5 Meter |
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Ambient Temperature 0 to 40 Deg C |
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Storage Temperature -10 to 70 Deg C |
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Humidity Upto 95% RH, Non Condensing |
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Altitude < 1000 Mtrs. Above Sea Level ( without derating) |
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PHYSICAL |
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Enclosure Protection Grade IP – 41 |
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Cooling Forced Air |
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Colour Siemens Gray |
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Cable Entry Bottom |
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Dimensions (in mm) Tentative W D H |
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800 800 1770 |
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Weight –Tentative 400 Kg |
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METERING |
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�� DC Voltage (digital) �� Output Current �� Output Frequency |
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�� Output Wattage |
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INDICATIONS |
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LED Indications �� Control Supply OK �� Rectifier over voltage |
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PROTECTIONS |
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�� Input Contactor |
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�� Input Single Phasing / phase |
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reversal |
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�� Rectifier Over voltage |
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�� High speed over current |
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�� Over temperature |
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�� Arc suppression |
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�� Output Overload |
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�� Output Short |
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Circuit |
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¥ Alarms are provided for all important protections. |
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TESTING STANDARDS |
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IEC 62040 - PART III |
5) The other parameters used during the trials are as below
During sputtering Gas Flow
H2 – 100 ml/min.
Ar - 100ml/min.
During nitriding
N2- 10ml/min.
H2- 90ml/min.
6) Material details
Composition W.P.S. EN41
HDS
C + CR + MO + W C -1.25 to 1.55% 1.5% CR/AL/MO
(0.36.4%) (4.80 to 5.2%) (1.2 to 1.6%) (8.0%) CR- 11 to 12 %
M - .5 to 1.0 %
V - .6 to 1.0%
Power Used Details
Sputtering Nitriding
Voltage – Max 1000V o 1100VDC 650 to 900
Current – 30A to 40 Amps 40 to 45 Amps
Frequency – 1KH2 1KH2
Temperature – 4500Celcius 450± 300 Celcius
Plasma Nitriding System
Re: Plasma Nitriding System
