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Anonymous Poster

Proper Application of the 2N3055 Transistor

02/19/2011 6:05 PM

The 2N3055 transistor is in the TO-3 package. This means that the two pins are the emitter and the gate and the collector is the body of the housing. Typically, an NPN transistor, used as a switch, is wired so that the positive electrical power is, let's say, run along the top of the circuit diagram, a lead drops down from the positive lead, goes thru the load, then out the bottom of the load to the transistor collector though the transistor, out its emittor, and then to ground. The "turn-on" signal is fed, thru a resistor to the gate, or course. My question is: Why in the world does the TO-3 case make the body of the transistor the collector. If the body of the transistor were the emittor, it would make sence to ground the body of the transistor, but this is not possible when the body of the transistor is the collector. It all makes it sort of difficult, or mayvbe just inconvenient to apply the TO-3 type transistor as a switch. I'm trying to apply the 2N3055 as a horn switch in an automobile application and the TO-3 configuration makes no sense to me. Am I missing something?

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#1

Re: Proper Application of the 2N3055 Transistor

02/19/2011 6:15 PM

There are electically isolated yet thermally conductive heat sink fitting kits available for TO-3 packages. You could also use the PNP equivalent 2N2955. Or maybe you could use the MJE 3055(NPN) or MJE2955(PNP) which are the TO-220 Plastic package.

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#4
In reply to #1

Re: Proper Application of the 2N3055 Transistor

02/19/2011 7:12 PM

The complication with the TO-220 package is that the metal tab is also the collector. The reason that the collector is connected to case in both transistors is a combination of legacy issues in transistor fabrication and the need to get heat out of the transistor.

Now that I think about it, heat is the crux of the choice connecting the collector to the heat sink. While getting the heat out of the transistor is important in general the temperature at the base (not gate as the OP stated) collector junction is not as critical as the temperature of the base emitter junction. A localized hot spot of this junction will cause a higher flow of current at that location, which will cause more local heating. A catastrophic positive feedback failure will quickly happen. If the emitter was attached to the heat sinking conductor then an uneven temperature will exist for this critical junction. By instead transferring the heat through the collector, the base emitter junction temperature will be uniform so no runaway hot spots.

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#10
In reply to #4

Re: Proper Application of the 2N3055 Transistor

02/21/2011 5:53 AM

. It's not just history that the collector is connected to the plate - even were we designing an economic 2N3055 replacement today the result would be the same.
. 67model is correct about the processing, but inexplicit as to the consequences: that the emitter and base connections are on one side of the plate, and the collector can be connected to either face.
. So the best side for attaching to the heat sink is the collector.

. Of course we could leave oxide films on the silicon, and connect all three terminals using wire-bonds. But an adequate oxide thickness (say 1 μm?) would add about 0.2OC/W to the thermal resistance. Plus it increases packaging complexity. Al2O3 film inside the package would be better, but processing and attachment less straightforward.
. If you are happy to burn money, you could consider diamond film for insulating the collector; or you could plate the emitter thickly so it connected directly to the heat sink - but then you would need a through-silicon via to connect the base. Yet another option is a sandwich heatsink to the package - but here again the external insulator is a satisfactory (and cheaper) option.

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#2

Re: Proper Application of the 2N3055 Transistor

02/19/2011 6:59 PM
  1. A transistor must be made from very pure silicon plate, with a very small amount of a certain impurity element which makes it N type - with conducting electrons. Without impurity, pure silicon is a good insulator.
  2. To make the base (gate is wrong word for control input on this type transistor) a P type impurity is diffused into the N base from one side of the plate. This overwhelms the N type property part way into the base and makes it a P type semiconductor. But this makes it a better conductor than the N base.
  3. To make the emitter, N type impurity is diffused into, but not all the way through the P type, in such overwhelming quantity that it makes N type - but now with an an even higher conductivity.
  4. But high impurity concentrations make for lower working voltage, so collector base has a much higher breakdown voltage than emitter-base.
  5. The crunch comes that you cannot turn high impurity silicon back into low impurity silicon with a high operating voltage.
  6. So you cannot turn the assembly round into what may be a thermally more convenient form - you cannot make two connections to the non-collector side of the plate when it is thermally brazed onto a metal heat removal plate - the case of the 2N3055!!
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#3

Re: Proper Application of the 2N3055 Transistor

02/19/2011 7:07 PM

At a 60 volt rating I suspect the back emf and inductive spikes from the horn kill it rather quickly. Most likely shorting it out to a permanently one state.

Just an educated guess.

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#5
In reply to #3

Re: Proper Application of the 2N3055 Transistor

02/19/2011 7:21 PM

Quite true but a simple solution of adding a reverse biased diode across the horn will solve this problem.

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#12
In reply to #5

Re: Proper Application of the 2N3055 Transistor

02/21/2011 6:26 AM

Rather put the diode across the transistor. Car electrics are very noisy, and spikes come from many sources. Even the stop-light switch activated by the brake pedal..

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#21
In reply to #12

Re: Proper Application of the 2N3055 Transistor

02/22/2011 9:32 AM

The guest wants to use the transistor between the load and -com, so while placing the suppression diode across the transistor provides some protection for the transistor, it does little to keep the back EMF voltage spike from an inductive load from reaching other components.

The best noise suppression scheme is achieved by placing the reversed bias diode red fred suggests directly across and as close to the load (horn) as possible. In this way, the stored inductive energy which creates the voltage spike is dissipated at the load before it can affect other components.

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#26
In reply to #21

Re: Proper Application of the 2N3055 Transistor

02/23/2011 8:44 AM

OK. But the problem is the horn is only one source of destructive spikes in the system. Some others are: Winscreen wiper motor, starter motor and solenoid, stop-light switch, turn indicator unit, relays for fuel pump etc.

So to protect the transistor, put the diode as close to it as possible! Or use a mosfet instead...

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#27
In reply to #26

Re: Proper Application of the 2N3055 Transistor

02/23/2011 9:03 AM

The destructive spikes are caused by opening of contacts in series with an inductive load. The back emf will forward bias the base-collector junction, and the reverse voltage will destroy the emitter-base junction. If the current is high (as with starter solenoid) the base-collector junction is also destroyed, giving you a short-circuit instead of a 2N3055.

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#28
In reply to #26

Re: Proper Application of the 2N3055 Transistor

02/25/2011 1:20 PM

Good point! Easier/cheaper to protect a single transistor (if that is all there is - guest does not give much detail) than to suppress each spike source. Would make sense to therefore similarly protect all other susceptible (if any) junction devices, no? Again, we don't really know the whole "circuit".

I am putting this in the "off topic" category because we are not answering the guest's original question about the collector case configuration.

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#29
In reply to #28

Re: Proper Application of the 2N3055 Transistor

02/25/2011 1:42 PM

Yes, but the back EMF problem from driving an inductor does not detonate the BJT from the collector voltage dropping below the base voltage. Most power BJT will easily survive forward current flowing between collector and base. This failure mechanism happens from the collector to base having a reverse current flow because a high voltage has exceeded the avalanche breakdown voltage. A reverse biased diode across the load protects any interference coupled signal from inducing a failure from overvoltage not just a back EMF from the load. Only a reverse biased zener diode across a sinking transistor will do anything to protect the circuit.

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#30
In reply to #29

Re: Proper Application of the 2N3055 Transistor

02/25/2011 2:28 PM

I fully understand how the inductive load generates a positive voltage spike at the collector as the base current drive is removed and the transistor is shutting off and how that can punch through the collector-base junction.

I respectfully disagree with your statement "Only a reverse biased zener diode across a sinking transistor will do anything to protect the circuit". A properly sized, reversed biased "suppression" diode across an inductive load (cathode to +) provides a current path directly across the load to dissipate the inductive energy stored therein. The only resultant voltage at the collector will be the forward drop on the suppression diode (minimal) as it forward conducts the dissipative current. Been successfully using this technique for over 30 years of relay designs. Some relay manufacturers offer suppression diodes as an option, while others customers just put them on at the relay terminals themselves when they hook them up.

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#31
In reply to #30

Re: Proper Application of the 2N3055 Transistor

02/25/2011 2:52 PM

Yes, a diode across the load will properly protect. I believe we have a communication error here. This is not as sharp a picture as I hoped but it will do.

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#32
In reply to #31

Re: Proper Application of the 2N3055 Transistor

02/25/2011 3:34 PM

Yes, my friend - we are in total agreement!

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#33
In reply to #29

Re: Proper Application of the 2N3055 Transistor

02/26/2011 6:05 AM

Right. That was only the beginning. The breakdown occurs when the forward bias causes the base-emitter junction to exceed its revesre rating (usually about 7V) and it pops.The heat usually causes "burn through" and the device becomes a conductor.

No longer, semiconductor..

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#6

Re: Proper Application of the 2N3055 Transistor

02/20/2011 1:13 AM

Package/case/tab connection is what it is. Proper voltage isolation and power dissipation (cooling) are just part of the normal design process.

I've built horn and headlight controls using BJTs and FETs. I highly recommend using FETs. Much easier to control/drive the FETs and power dissipation (if correct devices are chosen) should be lower.

BJT = 10A * 0.7V = 7W

FET = 10A * 10A * 0.040ohm = 4W

Cheap BUZ11 maybe?

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#7
In reply to #6

Re: Proper Application of the 2N3055 Transistor

02/20/2011 11:56 PM

MJB, excellent, you've gotta love that 40mohm on resistance, and at about a buck a piece,, well...

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#11
In reply to #7

Re: Proper Application of the 2N3055 Transistor

02/21/2011 6:18 AM

Also, modern MOSFET's have a built in reverse diode, with Zener characteristics. I've built some electronic ignition circuits and to date none have failed. I used 3 IRF840's in parallel. They're easy to parallel because of the temperature coefficient. Not so with bipolar transistors!

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#8

Re: Proper Application of the 2N3055 Transistor

02/21/2011 4:01 AM

Well is probably almost 40 years since I last used 3055's in anything (car ignition I think!), but the question was also in my mind then as to why the case was collector, now at long last I understand why!

Many thanks to all who posted.

No sarcasm intended by the way.....I am really grateful. A nice bit of electronic history.......

I have put holes through the cases more than once by misuse....! they make a satisfying bang if done correctly! But they were also a bit too expensive for me to lose at the time......modern power transistors are cheap in comparison!!

I had a quick look in an Elektor from 1976, but nobody was selling a 3055 in that issue.....sadly........but I bet they were over a UK pound each.....

It was for some years my (only) favourite power transistor......

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#24
In reply to #8

Re: Proper Application of the 2N3055 Transistor

02/22/2011 3:26 PM

You would lose the bet! [age has its merits].

"Wireless World" Jan 1970 - Advert by "ElectroValue". 2N3055 = 16 shillings and sixpence each! £0.825 for the historically challenged.

I must have got the 2N3055s for the "Capacitor Discharge Ignition" in that issue from L.S.T. for 15/- each, since I penned a ring around the entry. The capacitor crept up to 800 volts before starting and at idle. No problem starting - and it would idle with "choke in" as soon as it started!

2N3055 = 55p from CPC in Jan 1977 W.W.

Regards,

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#25
In reply to #24

Re: Proper Application of the 2N3055 Transistor

02/22/2011 3:56 PM

Excellent. Thanks.

That was a good bit of money in those days, I could go out, drink 3 pints of rough Scrumpy and have a bag of fish and chips.......and have some change.......

The fish and chips would cost at least 5 pounds alone today......what 3 pints of rough Scrumpy cost now I have no idea.......lets say 3 pounds.......at least.

I would not want to pay 8 pounds for a transistor.....

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#9

Re: Proper Application of the 2N3055 Transistor

02/21/2011 5:42 AM

The 2N3055 has a collector, base (not gate, it's not a MOSFET, but bipolar) and emitter. Use a heatsink, and mount it on insulating pillars.

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#13

Re: Proper Application of the 2N3055 Transistor

02/21/2011 8:14 AM

The other terminal is the base, not the gate.

Do you what to control the A+ or the ground?

What is the input, a ground ?

This transistor is typically used as light dimmer in aircraft applications.

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#16
In reply to #13

Re: Proper Application of the 2N3055 Transistor

02/21/2011 10:38 AM

The Triac for household use. "Insulated gate"..

I'd rather be flying!

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#17
In reply to #13

Re: Proper Application of the 2N3055 Transistor

02/21/2011 10:57 AM

I understand. We need the heat fpr deicing the wings. Good idea!
Anyone want some used 2N3055's?

I also often used a Silicon diode junction for temperature sensing. From memory, about -4mV/deg.C increase. Fridge or A/C control. Need a bit of hysteresis in the loop!

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#14

Re: Proper Application of the 2N3055 Transistor

02/21/2011 8:48 AM

The back side of the transistor die is the collector. It is attached to the TO-3 case, which makes the case body the collector connection. It is possible to place a dielectric isolator (BeO works well) between the transistor die and the case. When you do this, you can make the TO-3 package the emitter or the base of the transistor. You also have the option of using a 3 leaded TO-3 package and having the case float. Any of these options are specials and will be expensive in small quantities.

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#15
In reply to #14

Re: Proper Application of the 2N3055 Transistor

02/21/2011 9:38 AM

BeO (Beryllium Oxide) is extremely dangerous if inhaled. Don't ever cut open a transistor where this may be present (Usually RF products). It's worse than asbestos, and causes mesothelioma, lung cancer, from which Steve McQueen died!

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#18

Re: Proper Application of the 2N3055 Transistor

02/21/2011 4:47 PM

The 2N3055 transistor not a switching transistor but a linear device.

If used as a switch you have to drive deep in saturation.

This will delay the switcg-off and a sophisticated circuit is required for it.

Other explainations are well defined by some friends.

Was mostly used as driver in linear mode power suplly regulators.

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#22
In reply to #18

Re: Proper Application of the 2N3055 Transistor

02/22/2011 10:15 AM

Super as a linear regulator. We had to use fans to cool them.

Also, used the MJE3055 and mil spec op amp with !N4148 as temp sensor to replace the on/off thermostatic control in "Colvern" crystal ovens. Superb control. no more up and down Hz..

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#19

Re: Proper Application of the 2N3055 Transistor

02/22/2011 12:45 AM

Important points in summary

  • 2N3055 & 2N2955 are transistors;
    Transistors are for amplifier applications -- A large current is controlled by a small current in the base -- So applications will be for "sound output", "dimmer control" etc.,
  • The electrodes of a Junction transistors are collector, emitter & base;
    In a FET or MOSFET which is better suited for switching applications such as controlling the horn etc., the electordes are Collector, Emitter and the gate.
  • An input at the gate allows a switched change in the current between the other electrodes.
  • Refering to the particular question -- that "it makes sense to ground the body of the transistor"-- for that application there is the twin of 2N3055 which is 2N2955.
  • Collector-Base junction is reverse biased and maximum heat production is at this junction, so the heat dissipation or removal has to be linked to the collector.
  • Use 2N3055 for +ve earth system & use 2N2955 for -ve earth system. They both have similar characteristics, but are of opposite polarity - one is NPN & the other is PNP.
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#20
In reply to #19

Re: Proper Application of the 2N3055 Transistor

02/22/2011 12:48 AM

No, No, and get the terminals right, in a FET, Gate, Drain, Source...sheesh..

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#23
In reply to #20

Re: Proper Application of the 2N3055 Transistor

02/22/2011 12:07 PM

Yes You are right. Source, Gate & Drain.

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