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Operation Characteristics of a 3055T Device

03/01/2014 9:09 PM

With only a voltage potential on the collector - None on the base- Could there voltage or current flow measureable on the emitter?

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Guru

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#1

Re: Operation characteristics of an 3055T device

03/01/2014 9:50 PM

Assuming the device is good, .....Yes leakage current. But you need to show your test circuit, as this may be a trick question, as ground on the base is "none" voltage.

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#2
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Re: Operation characteristics of an 3055T device

03/01/2014 11:53 PM

Basically, I'm involved with a friends non-working DIY power supply.

What prompted the question is my non-familiaruty with the 3055T device.

In researching one of the problems he lifted the base that was connected to an LM 723 IC and powered up the power supply.

26.2 VDC is connected to the collector and the emitter is connected to two 3055 transistor bases, in parallel, with their collectors connected to this same 26.2 VDC line.

Each of these collectors have .1 Ohm 10 watt resistors preceding the parallel junction.

Now, you have it. The 3055T base has been disconnected from the IC and a voltage is being read on its collector.

According to a spec sheet there needs to be 1.8 VDC between collector and base, in order to turn on this transistor.

Please advise.

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#3
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Re: Operation characteristics of an 3055T device

03/02/2014 4:54 AM

The spec sheet say's 1.8 volt collector to base to turn it on? I think your misreading the spec. Vbe on is 1.8 MAXIMUM, but that's not where you would bias the device for proper operating.

This is an NPN TO220 package transistor. My read of the spec is Hfe is 20, and has a low Vce saturation of less then .1 volt. Vce breakdown is 60 volt max.

Is this design cascading one MJE3055 device to drive two more in parallel MJE3055 to make a Darlington type configuration? And it looks like your using a IC regulator with the LM723, to boost it's nominal 150ma output into this whole affair.

These (and all transistors) leak current in the off state. The collector cut-off current is 700microamps with the base at zero volts (@Vce=30 and Ib=0), so a high impedance DVM/DMM would not read zero.

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#4
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Re: Operation characteristics of an 3055T device

03/02/2014 6:42 PM

O.K., Thanks -

You've answered my inquiry and the the pass transistor combind output is being held to a preset value via the 723 IC and VR network at pin 4. i.e. 13.8 VDC

Have a great week!

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#5

Re: Operation Characteristics of a 3055T Device

03/03/2014 11:08 AM

A transistor is a current amplifier. The current through the collector-emitter circuit is proportional to the current through the base-emitter circuit. The factor of proportionality is called beta (β) or hfe.

In the circuit, the collector-base junction is a reversed biased diode. There is a very small leakage current through the collector-base circuit which would multiplied by the beta of the 2N3055 (beta=20 to 70) resulting in a very small amount of emitter current with no extra current injected into the base.

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#6
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Re: Operation Characteristics of a 3055T Device

03/03/2014 11:53 PM

Thanks for your additional information.

I appreciate your taking the time to enlighten me concerning NPN transistors.

Have a great day.

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#7
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Re: Operation Characteristics of a 3055T Device

03/04/2014 10:54 AM

Here's a data sheet. The collector cutoff current is 700μa @ 30V. I forgot to mention that if you put more than 60V on the collector, you will get a whole lot more current as the base-collector junction breaks down.

http://hep.fi.infn.it/PAMELA/pdf/MJE3055.pdf

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#8
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Re: Operation Characteristics of a 3055T Device

03/04/2014 4:37 PM

Thanks, again, for your helpful information.

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#9

Re: Operation Characteristics of a 3055T Device

03/07/2014 10:42 AM

MidnightCowboy:


Very much yes. Leaving the base open is very dangerous. It reduces the collector - emitter breakdown potential. Better to tie it to ground using some resistor like 10K to 100K ohms.

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#10
In reply to #9

Re: Operation Characteristics of a 3055T Device

03/07/2014 7:28 PM

Lifting the base from the 723 IC was on of short duration, in order to determine the effect on paired NPN output.

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#11
In reply to #10

Re: Operation Characteristics of a 3055T Device

03/07/2014 11:17 PM

MidnightCowboy:

Most of the amplifiers were very sensitive to their non-inverting input being floated and often were damaged. Only those amplifiers that are protected against such open circuit will survive.

For transistors, it is often specified that open base brings down the operating voltage of the transistors also. Some minimum base charge drainage circuit is essential. In Avalanche mode, charge injection between collector emitter is often limited else junction will get punctured permanently.

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#12
In reply to #11

Re: Operation Characteristics of a 3055T Device

03/08/2014 6:33 PM

Thank you for your learned opinion.

I appreciate your taking the time to pass this information on to me!

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