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Calculation of FET Temp/Power Maximums

11/30/2015 5:35 PM

I'm using a FET as an example, but would like to do this for other components. The data sheet gives you RthJC, RthJA, RDSon and Max Power Dissipation. I assume you also need to know max current through drain and max ambient temp for your application. Given this information how do you make sure you are not exceeding the max ratings of the part? I know this would be difficult to answer in this forum. Could someone point me to a good tutorial on how to do this? Another question- the data sheet I'm looking at now has 2 different max power dissipation ratings. One says 125W, the other says if mounted to a piece of FR4 its only 3W. How can these numbers be so different?

Any Help Appreciated

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#1

Re: Calculation of FET Temp/Power Maximums

11/30/2015 6:02 PM

The Temperature Ratings Of Electronic Parts « Electronics ...

" if mounted to a piece of FR4 its only 3W". That's in air. In a vacuum it would be much less.

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#3
In reply to #1

Re: Calculation of FET Temp/Power Maximums

11/30/2015 8:07 PM

Hi,

I guess I'm still missing something. The data sheet lists two different PD numbers for the FET, 125W with no footnote - 3W with a footnote that says if mounted to a piece of FR4. I don't understand how these two numbers relate to each other, there is a huge disparity between them. I'm assuming the fact that it is mounted to a piece of FR4 means that it's in air. The case is not soldered to a pad on the board and there would be little to no heat sunk from the part to the board, correct? If I have that much right under what circumstance would the 125W parameter apply?

The link you sent me has lots of good info. However I don't see anything that takes the parameters I mentioned in my original question and uses them to calculate the temp/power maximums. Do you know of any text that would speak to this.

Thanks for the response and the link.

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#4
In reply to #3

Re: Calculation of FET Temp/Power Maximums

11/30/2015 8:16 PM
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#7
In reply to #4

Re: Calculation of FET Temp/Power Maximums

12/01/2015 10:07 PM

Many Thanks Lyn,

These links answered all questions.

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#8
In reply to #7

Re: Calculation of FET Temp/Power Maximums

12/01/2015 10:33 PM

Welcome.

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#2

Re: Calculation of FET Temp/Power Maximums

11/30/2015 6:38 PM

It's all about providing a low thermal resistance path for the heat to escape. It's analogous to an electrical circuit where temperature relates to voltage, heat flow to current, and thermal resistance to electrical resistance.

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#5

Re: Calculation of FET Temp/Power Maximums

11/30/2015 9:34 PM

125W assumes a heatsink at the specified temperature with enough heat transfer to prevent any rise in temperature. Most times, the 'high' power dissipation is measured at 25C which is crazy low for most applications except active liquid cooling. You have to know your delta-T (or be able to calculate it) across each of the interfaces to be able to calculate the flow of heat (thermal power) with the given thermal impedances.

You can work it from the environment back to device (start with a known temperature) or make some assumptions about power dissipation at the device and calculate the delta-T's out to the environment to find the junction temperature.

You can usually ignore the radiated heat loss as that is typically in the noise unless you design for space, and the convective losses are usually ignored if you are using a heat sink. The FR-4 case (3W) is the maximum convection power dissipation before the part lets out the magic smoke in a still air, 25 C environment.

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#10
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 7:44 AM

Radiant is not negligible, even at 10'C differential for building heat loss calculation, it is a little more than convection.

However, since most electrical equipment is enclosed, with ventilating grills, the casing temperature is as hot as the air in the case - so radiant transfer is uncertain.

Makes me wonder, never thought before, how much "heat sink" makers might massage the figures upwards by including radiant losses.

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#11
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 9:29 AM

I'm sure heat sink makers do take radiation into account.

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#12
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 11:09 AM

For whatever worth this may be, even a properly heat sinked big power semi-conductors, as exprienced can easily convert sprinkled or sprayed water into steam and evaporation during its normal operation! To alleviate such conditions additional exhaust or cooling fans were added to improve air movement inside its enclosure for a more stable operation!

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#13
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 11:32 AM

If there is a heatsink in use, the radiated heat loss (of the device) becomes a diminishing small percentage unless there is a very large delta-T. I ignore it for most of the work I do. At worst, it makes the other heat sinks slightly over-sized which in most cases is not always a bad thing.

I'm not ignoring the radiated heat loss of the heat sink, that's a different issue. This question was about calculating the junction temperature and the thermal impedance of the heatsink includes the convection, radiation, and any conducted losses.

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#14
In reply to #5

Re: Calculation of FET Temp/Power Maximums

12/02/2015 7:58 PM

"High power dissipation is measured at 25C which is crazy low"

I do agree it is crazy and I fail to understand the rationale behind it.

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#15
In reply to #14

Re: Calculation of FET Temp/Power Maximums

12/02/2015 8:09 PM

Why is it crazy?

Room temperature is where most humans are designed to operate.

The equipment would be there too.

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#16
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 10:32 PM

The heatsink will never be at that temperature even with fan cooling. Usually they will run too hot to touch. Unless of course you're one of those blessed (or cursed) with 'asbestos skin'.

Another way to look at it is, if the heatsink is at 25C, how do we reject any heat into a room at 25C?

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#17
In reply to #15

Re: Calculation of FET Temp/Power Maximums

12/02/2015 10:48 PM

Lyn,

Almost all of the data sheets of devices provide ratings for Tj being at 25DegC which is absurd. Even if you consider Ta (ambient) @ 25DegC, Tj will always be higher for a regular heat sink except in case of liquid cooled plates as mentioned by Sir Robin.

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#18
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Re: Calculation of FET Temp/Power Maximums

12/02/2015 11:04 PM

So, shoot me!

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#19
In reply to #17

Re: Calculation of FET Temp/Power Maximums

12/03/2015 5:05 AM

Most semiconductor factory tests are done, for speed, with pulses so short there is no temperature rise. Presumably, the factory test bay is at 25'C, since this avoids putting devices in ovens (or fitting them on heatsinks) to do a test.

Like the QWERTY keyboard, it may have been settled by history - maybe the standard USA air-conditioner setting for human in T-shirt & jeans.

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#6

Re: Calculation of FET Temp/Power Maximums

12/01/2015 6:27 AM

Is there a supplier and a telephone number on the datasheet? If so, ringing the supplier will be the quickest route to finding answers to these questions. The technique is immediate, interactive, and one forms working relationships with real people - highly recommended.

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#9

Re: Calculation of FET Temp/Power Maximums

12/02/2015 4:32 AM

The 125W is on an 'infinite' heatsink which is never attainable so you need to know the actual thermal resistance of your heat path to the environment to work back to junction temperature. This assumes you know what power is dissipated in the device which can be very difficult to gauge if current/voltage is switched. A solution if the device has a diode like the source drain parasitic diode in a mosfet is to measure the volt drop across the diode with the FET unpowered at different temperatures. The value will vary according to the 'diode law'. This gives you a calibration curve. Then power the system, let stabilise, switch off and immediately measure the volt drop again. The value can be compared with the calibration curve to get actual temperature. In practice this must be done by ATE to be quick enough. Residual system voltages must be allowed to decay. This dynamic method is how semi manufacturers characterise their devices.

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