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Researchers from the University of Sheffield and Japanese company POWDEC KK
have discovered how to use polarization in nitride semiconductors to produce
two-dimensional hole gases with greater carrier density and mobility. Applications
may include p-channel heterostructure field-effect transistors (HFETs) and so-called
"super junction" devices that use both two-dimensional hole gases (2DHGs) and
two-dimensional electron gases (2DEGs).
Most two-dimensional electron gases (2DEGs) have carrier densities twice those
of two-dimensional hole gases 2DHGs and 200 times the mobility. As the basis
for high-electron mobility transistors (HEMTs), 2DEGs arise at the interface between
aluminum gallium nitride (AlGaN) and gallium nitride (GaN) because of their positive polarization. Potential applications for 2DHG HEMTs include power electronics that require both high frequency and high voltage.
The research team from the University of Sheffield and POWDEC KK claims that
its research could lead to the creation of ultra-low-loss power devices (UPD)
that require less electrical energy and, consequently, cause fewer carbon dioxide
emissions. As the world's energy demands and information technology (IT)
infrastructure continues to grow, how important is an emphasis on UPDs?
Source: Semiconductor
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